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Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays

Author(s):
Ohyama,H.
Vanhellemont,J.
Simoen,E.
Claeys,C.
Takami,Y.
Hayama,K.
Sunaga,H.
Poortmans,J.
Caymax,M.
4 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. date:
1997
Vol.:
Part1
Page(from):
121
Page(to):
126
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497874 [0878497870]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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