Three-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain properties
- Author(s):
- Chan,Y. ( Univ.of Hong Kong )
- Chan,M.C.Y. ( Univ.of Hong Kong )
- Li,E.H. ( Univ.of Hong Kong )
- Publication title:
- Physics and Simulation of Optoelectronic Devices VI
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3283
- Pub. Year:
- 1998
- Vol.:
- Part 1
- Page(from):
- 357
- Page(to):
- 364
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819427229 [0819427225]
- Language:
- English
- Call no.:
- P63600/3283
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Optical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structure
SPIE - The International Society for Optical Engineering |
7
Conference Proceedings
Analysis of Three Types of Interdiffusion Process in InGaAs/InP Quantum Well and Their Device Implications
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
8
Conference Proceedings
Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
10
Conference Proceedings
Quantum well intermixing: materials modeling and device physics (Invited Paper)
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
11
Conference Proceedings
Effect of carriers on the optical properties of AlGaAs/GaAs interdiffused quantum well lasers
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |