Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices (Invited Paper)

Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices (Invited Paper)

Author(s):

Huffaker,D.L. ( The Univ.of Texas at Austin )
Schaub,J.D. ( The Univ.of Texas at Austin )
Deng,H. ( The Univ.of Texas at Austin )
Deppe,D.G. ( The Univ.of Texas at Austin )

Publication title:

Physics and Simulation of Optoelectronic Devices VI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3283

Pub. Year:

1998

Vol.:

Part 1

Page(from):

144

Page(to):

151

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427229 [0819427225]

Language:

English

Call no.:

P63600/3283

Type:

Conference Proceedings

Details

TDL ID:	ZA00018782
Series ID:	PA00000029
Conf. info. (Name):	Photonics West : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	1998 : 6th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1998.01.26-1998.01.30

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