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Initial growth effects on the properties of GaN buffer layer and subsequent GaN overlayer by MOCVD

Author(s):
Publication title:
Optoelectronic Materials and Devices II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4078
Pub. Year:
2000
Page(from):
697
Page(to):
703
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819437174 [0819437174]
Language:
English
Call no.:
P63600/4078
Type:
Conference Proceedings

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