Study of strain relaxation in epitaxial structure Ge0.2Si0.8/Si at thermo-implantation treatment by ion beam channeling

Study of strain relaxation in epitaxial structure Ge0.2Si0.8/Si at thermo-implantation treatment by ion beam channeling

Author(s):

Publication title:

Fundamental mechanisms of low-energy-beam-modified surface growth and processing : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

585

Pub. Year:

2000

Page(from):

183

Pub. info.:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558994935 [1558994939]

Language:

English

Call no.:

M23500/585

Type:

Conference Proceedings

Details

TDL ID:	ZA00018511
Series ID:	PA00000011
Conf. info. (Name):	Fundamental Mechanisms of Low-Energy-Beam-Modified Surface Growth and Processing : Symposium
Conf. info. (Number):	1999
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1999.11.29-1999.12.02

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