Modeling of PVT growth of bulk SiC crystals: General trends and 2" to 4" reactor scaling

Modeling of PVT growth of bulk SiC crystals: General trends and 2" to 4" reactor scaling

Author(s):

Ramm, M. S.

Publication title:

New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

616

Pub. date:

2000

Page(from):

227

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995246 [1558995242]

Language:

English

Call no.:

M23500/616

Type:

Conference Proceedings

Details

TDL ID:	ZA00018509
Series ID:	PA00000011
Conf. info. (Name):	New Methods, Mechanisms and models of Vvapor Deposition : Symposium
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.26

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