Computational experiment of CVD of SiC: Growth rate, C/Si ratio, parasitic phase formation | 東京工業大学附属図書館文献データベース

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Computational experiment of CVD of SiC: Growth rate, C/Si ratio, parasitic phase formation

Author(s):

Vorob'ev, Andrei N.

Komissarov, Alexandre E.

Bogdanov, Maxim V.

Karpov, Sergey Yu.

Zhmakin, Alexandre I.

Lovtsus, Andrei A.

Makarov, Yuri N.

Publication title:

New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

616

Pub. Year:

2000

Page(from):

165

Pub. info.:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995246 [1558995242]

Language:

English

Call no.:

M23500/616

Type:

Conference Proceedings

Details

TDL ID:	ZA00018509
Series ID:	PA00000011
Conf. info. (Name):	New Methods, Mechanisms and models of Vvapor Deposition : Symposium
Conf. info. (Number):	2000
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.04.24-2000.04.26

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