CHARACTERIZATION OF GALLIUM NITRIDE GROWN ON (0001) SAPPHIRE BY PLASMA-ENHANCED ATOMIC LAYER EPITAXY

CHARACTERIZATION OF GALLIUM NITRIDE GROWN ON (0001) SAPPHIRE BY PLASMA-ENHANCED ATOMIC LAYER EPITAXY

Author(s):

Publication title:

Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

326

Pub. Year:

1994

Page(from):

347

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992252 [1558992251]

Language:

English

Call no.:

M23500/326

Type:

Conference Proceedings

Details

TDL ID:	ZA00018465
Series ID:	PA00000011
Conf. info. (Name):	Symposium on growth, processing, and characterization of semiconductor heterostructures
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

Similar Items:

1 Conference Proceedings The Role of Impurities in LP-MOCVD Grown Gallium Nitride Hwang, C. -Y., Li, Y., Schurman, M. J., Mayo, W. E., Lu, Y., Stall, R. A. MRS - Materials Research Society	7 Conference Proceedings Optical and Electrical Properties of Al1-xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy Danylyuk, Y.V., Lukitsch, M. J., Huang, C., Auner, G. W., Naik, R., Naik, V. M. Materials Research Society
2 Conference Proceedings Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire … H.Y. Liu, V. Avrutin, N. Izyumskaya, M.A. Reshchikov, S. Wolgast, C. Kurdak, A.B. Yankovich, A. Kvit, P. Voyles, Ü. … Materials Research Society	8 Conference Proceedings Homoepitaxial and Heteroepitaxial Gallium Nitride Grown by Molecular Beam Epitaxy Foxon, C. T., Cheng, T. S., Korakakis, D., Novikov, S. V., Campion, R. P., Grzegory, I., Porowski, S., Albrecht, M., … MRS - Materials Research Society
3 Conference Proceedings Photoluminescence and SIMS Studies of Hydrogen Passivation of MG-Doped P-Type Gallium Nitride Li, Y., Lu, Y., Shen, H., Wraback, M., Hwang, C. -Y., Schurman, M., Mayo, W., Salagaij, T., Stall, R. A. MRS - Materials Research Society	9 Conference Proceedings Optical and Microstructural Characterization of InN Grown by PAMBE on (0001)Sapphire and (001) YSZ Anderson, P.A., Kendrick, C.E., Lee, T.E., Diehl, W., Kennedy, V.J., Markwitz, A., Kinsey, R.J., Durbin, S.M. Materials Research Society
4 Conference Proceedings Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy Huang, J. W., Lu, H., Cederberg, J. G., Bhat, I., Kuech, T. F. MRS - Materials Research Society	10 Conference Proceedings Shallow dopants and the role of hydrogen in epitaxial layers of Gallium Nitride (GaN) Gotz, W., Johson, N.M., Bour, D.P., Chen, C., Liu, H., Imler, W. Electrochemical Society
5 Conference Proceedings Growth and Characterization of Epitaxial Al1-xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy Lukitsch, M. J., Auner, G. W., Naik, R., Naik, V. M. Materials Research Society	11 Conference Proceedings MOCVD Production of III-V Nitride Materials in a Multi-Wafer Rotating Disk Reactor Liu, H., Thompson, A.G., Chern, C.S., Zawadzki, P.A., Kroll, W.J., Stall, R.A., Hwang, C-Y., Mayo, W.E. Electrochemical Society
6 Conference Proceedings Characterization of aluminum nitride thin films grown by plasma source molecular-beam epitaxy G.W. Auner, P.K. Kuo, Y.S. Lu, Z.L. Wu Society of Photo-optical Instrumentation Engineers	12 Conference Proceedings Magnetron Sputter Epitaxy of Gallium Nitride on(OOOl)Sapphire Webb,J.B., Northcott,D., Charbonneau,S., Yang,F., Lockwood,D.J., Malvezin,O., Singh,P., Corbett,J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12