Blank Cover Image

ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON

Author(s):
Wu, M. F.
Wachter, J. De
Bavel, A.-M. Van
Pattyn, H.
Langouche, G.
Vanhellemont, J.
Bender, H.
Temst, K.
Wuyts, B.
Bruynseraede, Y.
5 more
Publication title:
Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
316
Pub. Year:
1994
Page(from):
711
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992153 [1558992154]
Language:
English
Call no.:
M23500/316
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON

Wu, M. F., Wachter, J. De, Bavel, A.-M. Van, Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Temst, K., Wuyts, …

MRS - Materials Research Society
7 Conference Proceedings GROWTH OF SINGLE CRYSTAL TYPE A AND TYPE B CoXNi1-XSi2 LAYERS ON Si (111)

Tung, R. T., Heliman, F., Gibson, J. M., Boone, T.

Materials Research Society
2 Conference Proceedings FORMATION OF WELL-SEPARATED BURIED AND SURFACE NICKEL-SILICIDE LAYERS IN A SINGLE ION IMPLANTATION STEP

Wu, M.F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A.M., Langouche, G., Vanhellemont, J., Bender, H., …

Materials Research Society
8 Conference Proceedings Low Temperature Anneal of the Divacancy in P-Type Silicon

Trauwaert, M.-A., Vanhellemont, J., Maes, H. E., Bavel, A.-M. Van, Langouche, G., Stesmans, A., Clauws, P.

MRS - Materials Research Society
3 Conference Proceedings Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation

Langouche,G., Wu,M.F., Wachter,J.De, Pattyn,H., Bavel,A.-M.Van

Trans Tech Publications
9 Conference Proceedings On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C

Trauwaert,M.-A., Vanhellemont,J., Maes,H.E., Bavel,A.-M.Van, Langouche,G., Stesmans,A., Clauws,P.

Trans Tech Publications
4 Conference Proceedings Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers

Bender, H., Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G.

MRS - Materials Research Society
10 Conference Proceedings Growth of Co on Ag(100): A comparison of ultra low energy ion beam deposition and thermal deposition

Degroote, B., Dekoster, J., Degroote, S., Pattyn, H., Vantomme, A., Langouche, G., Hou, M.

MRS-Materials Research Society
5 Conference Proceedings Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

Wu, M. F., Vantomme, A., Hogg, S., Pattyn, H., Langouche, G., Jin, S., Bender, H.

MRS - Materials Research Society
11 Conference Proceedings Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis

Volz,K., Lindner,J.K.N., Stritzker,B.

Trans Tech Publications
6 Conference Proceedings High Quality GdSi1.7 Layers Formed by High Dose Channeled Implantation

Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G., Bender, H.

MRS - Materials Research Society
12 Conference Proceedings Alkane Partial Oxidation with Iron N,N'-bis(2-Pyridinecarboxamide) Complexes Encaged in Zeolite Y

Knops-Gerrits, P. P., L'abbe, M, Leung, W. H., Bavel, A.- M. Van, Langouche, G., Bruynseraede, I., Jacobs, P. A.

Elsevier
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12