Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers
- Author(s):
Ohyama, H. Simoen, E. Claeys, C. Takami, Y. Hayama, K. Hakata, T. Tokuyama, J. Kobayashi, K. Sunaga, H. Poortmans, J. Caymax, M. - Publication title:
- Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 533
- Pub. Year:
- 1998
- Page(from):
- 99
- Pub. info.:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994393 [1558994394]
- Language:
- English
- Call no.:
- M23500/533
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Radiation Damage in Si Avalanche Photodiodes by 1-MeV Fast Neutrons and 220-MeV Carbon Particles
MRS - Materials Research Society |
Electrochemical Society |
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
10
Conference Proceedings
Proton-irradiation effect on the electric-field enhancement of the generation lifetime in shallow P-N junction diodes
Electrochemical Society |
5
Conference Proceedings
Proton irradiation induced lattice defects in Si diodes and their effects on device performance
Electrochemical Society |
Trans Tech Publications |
6
Conference Proceedings
Degradation and Recovery of Si Diodes by 20-MeV Protons and 220-MeV Carbon Particles
MRS - Materials Research Society |
12
Conference Proceedings
Influence Of Mechanical Stress On The Electrical Performance Of Polycrystalline-Silicon Resistors
Materials Research Society |