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Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers

Author(s):
Ohyama, H.
Simoen, E.
Claeys, C.
Takami, Y.
Hayama, K.
Hakata, T.
Tokuyama, J.
Kobayashi, K.
Sunaga, H.
Poortmans, J.
Caymax, M.
6 more
Publication title:
Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
533
Pub. date:
1998
Page(from):
99
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994393 [1558994394]
Language:
English
Call no.:
M23500/533
Type:
Conference Proceedings

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