The Effect of Growth Temperature and Substrate Misorientation on Degree of Order and Antiphase Domain Size in Ga0.52In0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE

The Effect of Growth Temperature and Substrate Misorientation on Degree of Order and Antiphase Domain Size in Ga0.52In0.48P Epilayers Grown on GaAs(001) Substrates by GS-MBE

Author(s):

Publication title:

Electron microscopy of semiconducting materials and ULSI devices : symposium held Aprl 15-16, 1998, San Francisco, California, U. S. A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

523

Pub. Year:

1998

Page(from):

235

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994294 [1558994297]

Language:

English

Call no.:

M23500/523

Type:

Conference Proceedings

Details

TDL ID:	ZA00018458
Series ID:	PA00000011
Conf. info. (Name):	Symposiujm on electron microscopy of semiconducting materials and ULSI devices
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	1998.04.15-1998.04.16

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