Is an Arsenic-Antisite-Defect a Constituent of Hydrogen-Related Metastable Defects (M3/M4) in GaAs?

Is an Arsenic-Antisite-Defect a Constituent of Hydrogen-Related Metastable Defects (M3/M4) in GaAs?

Author(s):

Publication title:

Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

513

Pub. Year:

1998

Page(from):

257

Pub. info.:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994195 [155899419X]

Language:

English

Call no.:

M23500/513

Type:

Conference Proceedings

Details

TDL ID:	ZA00018457
Series ID:	PA00000011
Conf. info. (Name):	Symposium on hydrogen in semiconductors and metals
Conf. info. (Number):	1998
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.17

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