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Uniformity, High-Temperature Performance and Reliability of X-band Nitride Power HEMTs Fabricated From 2-Inch Epitaxy

Author(s):
Hickman, R.
Hove, J. M. Van
Chow, P. P.
Klaassen, J. J.
Wowchack, A. M.
Polley, C. J.
1 more
Publication title:
Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
483
Pub. date:
1998
Page(from):
405
Pub. info.:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993884 [1558993886]
Language:
English
Call no.:
M23500/483
Type:
Conference Proceedings

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