Uniformity, High-Temperature Performance and Reliability of X-band Nitride Power HEMTs Fabricated From 2-Inch Epitaxy
- Author(s):
Hickman, R. Hove, J. M. Van Chow, P. P. Klaassen, J. J. Wowchack, A. M. Polley, C. J. - Publication title:
- Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 483
- Pub. Year:
- 1998
- Page(from):
- 405
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993884 [1558993886]
- Language:
- English
- Call no.:
- M23500/483
- Type:
- Conference Proceedings
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