A Novel Technique for RTP Annealing of Compound Semiconductors
- Author(s):
Fu, M. Sarvepalli, V. Singh, R. K. Abernathy, C. R. Cao, X. Pearton, S. J. Sekhar, J. A. - Publication title:
- Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 483
- Pub. Year:
- 1998
- Page(from):
- 345
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993884 [1558993886]
- Language:
- English
- Call no.:
- M23500/483
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
MRS-Materials Research Society |
9
Conference Proceedings
Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications
Electrochemical Society |
MRS - Materials Research Society |
10
Conference Proceedings
NoVel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations
Trans Tech Publications |
Materials Research Society |
11
Conference Proceedings
COMPARISON OF MULTIPOLAR RESONANT-CAVITY AND MAGNETIC MIRROR MICROWAVE ECR SOURCES FOR DRY ETCHING OF III-V SEMICONDUCTORS
MRS - Materials Research Society |
6
Conference Proceedings
Unintentional hydrogenation of III-V semiconductors during device processing
Trans Tech Publications |
Materials Research Society |