Epitaxial Growth of High-Quality SiC by Sublimation Close-Space Technique

Epitaxial Growth of High-Quality SiC by Sublimation Close-Space Technique

Author(s):

Publication title:

Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

483

Pub. Year:

1998

Page(from):

307

Pub. info.:

Warrendale, Penn.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993884 [1558993886]

Language:

English

Call no.:

M23500/483

Type:

Conference Proceedings

Details

TDL ID:	ZA00018454
Series ID:	PA00000011
Conf. info. (Name):	Symposium on power semiconductor materials and devices
Conf. info. (Number):	1997
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1997.12.01-1997.12.04

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