ICP Etching of SiC
- Author(s):
Wang, J. J. Lambers, E. S. Pearton, S. J. Ostling, M. Zetterling, C-M. Grow, J. M. Ren, F. - Publication title:
- Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 483
- Pub. Year:
- 1998
- Page(from):
- 177
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993884 [1558993886]
- Language:
- English
- Call no.:
- M23500/483
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
Trans Tech Publications |
Materials Research Society |
8
Conference Proceedings
Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum anealing process
MRS-Materials Research Society |
3
Conference Proceedings
Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process
Trans Tech Publications |
9
Conference Proceedings
SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
Trans Tech Publications |
MRS - Materials Research Society |
10
Conference Proceedings
Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
MRS - Materials Research Society |
12
Conference Proceedings
In-Situ Chemical Surface Treatments For The Removal of AIN/SiC Interfacial Contamination
Electrochemical Society |