Blank Cover Image

Thin film Diamond field-Effect Transistors for High-Power Applications

Author(s):
Publication title:
Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
483
Pub. Year:
1998
Page(from):
63
Pub. info.:
Warrendale, Penn.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993884 [1558993886]
Language:
English
Call no.:
M23500/483
Type:
Conference Proceedings

Similar Items:

Whitfield, Michael D., Looi, Hui Jin, Lansley, Stuart P., Foord, John S., Jackman, Richard B.

Electrochemical Society

Bergonzo, P., Foulon, F., Marshall, R. D., Jany, C., Brambilla, A., McKeag, R. D., Jackman, R. B.

MRS - Materials Research Society

McKeag, Robert D., Whitfield, Michael D., Chan, Simon SM, Pang, Lisa YS, Jackman, Richard B.

MRS - Materials Research Society

C. Shi, G. Pang

Society of Photo-optical Instrumentation Engineers

Andrew Bennett, Olivier Gaudin, Oliver A Williams, John S. Foord, Richard B. Jackman

Materials Research Society

Mose Bevilacqua, Niall Tumilty, Aysha Chaudhary, Haitao Ye, James E. Butler, Richard B. Jackman

Materials Research Society

Hseig, B. -C., Hwakins, G. A., Ashok, S.

Materials Research Society

Mose Bevilacqua, Richard B. Jackman

Materials Research Society

Richard B. Jackman

American Institute of Chemical Engineers

Jackman, Richard B., Chua, Lye Hing, Foord, John S.

Materials Research Society

Haitao Ye, Niall Tumilty, David Garner, Richard B. Jackman

Materials Research Society

Howser,Jim H., Stevens,Richard

SPIE-The International Society for Optical Engineering

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12