Dependence of Reliability of Ultrathin MOS Gate Oxides on the Fermi Level Positions at Gate and Substrate

Dependence of Reliability of Ultrathin MOS Gate Oxides on the Fermi Level Positions at Gate and Substrate

Author(s):

Publication title:

Materials reliability in microelectronics VII : symposium held April 8-12, 1997, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

473

Pub. Year:

1997

Page(from):

123

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993778 [1558993770]

Language:

English

Call no.:

M23500/473

Type:

Conference Proceedings

Details

TDL ID:	ZA00018453
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials reliability in microelectronics
Conf. info. (Number):	7th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1997.04.08-1997.04.12

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