Influence of Boron Diffusion on Ultrathin Oxides
- Author(s):
- Publication title:
- Materials reliability in microelectronics VII : symposium held April 8-12, 1997, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 473
- Pub. Year:
- 1997
- Page(from):
- 101
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993778 [1558993770]
- Language:
- English
- Call no.:
- M23500/473
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
Influence of Flouring and BF2 Implants on the Transient Enhanced Diffusion of Boron
Electrochemical Society |
2
Conference Proceedings
SURFACE CHARACTERISATION OF Si AFTER HF TREATMENTS AND ITS INFLUENCE ON THE DIELECTRIC BREAKDOWN OF THERMAL OXIDES
Materials Research Society |
8
Conference Proceedings
Ultrathin Gate Oxides With Shallow Nitrogen Implants as Effective Barriers to Boron Diffusion
MRS - Materials Research Society |
3
Conference Proceedings
Measurement technique, oxide thickness and area dependence of soft-breakdown
MRS-Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
10
Conference Proceedings
BORON-ENHANCED-DIFFUSION OF BORON FROM ULTRA- LOW-ENERGY BORON IMPLANTATION
Electrochemical Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |