Photoconductivity of a-Si:H as a Function of Doping, Temperature and Photocarrier Generation Rates Between 1013 and 1028cm-3s-1

Photoconductivity of a-Si:H as a Function of Doping, Temperature and Photocarrier Generation Rates Between 1013 and 1028cm-3s-1

Author(s):

Publication title:

Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

420

Pub. Year:

1996

Page(from):

765

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993235 [1558993231]

Language:

English

Call no.:

M23500/420

Type:

Conference Proceedings

Details

TDL ID:	ZA00018448
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous silicon technology
Conf. info. (Number):	1996
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1996.04.08-1996.04.12

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