Blank Cover Image

Observation of Configurational Switching of Deep Defects in a-Si:H Using Thermal Step Insertion During Capacitance Transient Measurements

Author(s):
Publication title:
Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
420
Pub. date:
1996
Page(from):
709
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993235 [1558993231]
Language:
English
Call no.:
M23500/420
Type:
Conference Proceedings

Similar Items:

Cohen, J. David, Gardner, Adam D., Kwon, Daewon

MRS - Materials Research Society

Palinginis, Kimon C., Illie, A., Milne, W.I., Cohen, J. David

Materials Research Society

Shouvik Datta, J. David Cohen, Yueqin Xu, Howard M. Branz

Materials Research Society

Kobayashi, S., Imai, S., Hayami, Y., Kushibe, M., Shinohe, T., Okushi, H.

Trans Tech Publications

Peter T. Erslev, Adam Halverson, William Shafarman, J. David Cohen

Materials Research Society

Gotz, W., Johnson, N. M., Street, R. A., Amano, H., Akasaki, I.

MRS - Materials Research Society

Zhong, F., Cohen, J.D.

Materials Research Society

Zhong, F., Cohen, J. D.

MRS - Materials Research Society

Hautala, J., Unold, T., Cohen, J.D.

Materials Research Society

Adam Halverson, Shiro Nishiwaki, William Shafarman, J. David Cohen

Materials Research Society

Cohen, J. David, Heath, Jennifer T., Shafarman, William N.

Materials Research Society

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12