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Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

Author(s):
Kim, C. S.
Noh, S. K.
Lee, H. J.
Cho, Y. K.
Kim, Y. I.
Park, H. S.
Kim, T. I.
2 more
Publication title:
Evolution of epitaxial structure and morphology : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
399
Pub. Year:
1996
Page(from):
449
Pub. info.:
Pittsburgh, Pennsylvania: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993020 [1558993029]
Language:
English
Call no.:
M23500/399
Type:
Conference Proceedings

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