Low-Temperature Growth and Structural Characterization of GaAs Using Ionized Source Beam Epitaxy

Low-Temperature Growth and Structural Characterization of GaAs Using Ionized Source Beam Epitaxy

Author(s):

Publication title:

Evolution of epitaxial structure and morphology : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

399

Pub. Year:

1996

Page(from):

23

Pub. info.:

Pittsburgh, Pennsylvania: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993020 [1558993029]

Language:

English

Call no.:

M23500/399

Type:

Conference Proceedings

Details

TDL ID:	ZA00018446
Series ID:	PA00000011
Conf. info. (Name):	Symposium on evolution of epitaxial structure and morphology
Conf. info. (Number):	1995
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.12.01

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