Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions

Point Defect-Based Modeling of Transient Diffusion of Boron Implanted in Silicon Along Random and Channeling Directions

Author(s):: Jager, H. U.
Publication title:: Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A.
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 389
Pub. Year:: 1995
Page(from):: 71
Pub. info.:: Pittsburgh: MRS - Materials Research Society
ISSN:: 02729172
ISBN:: 9781558992924 [1558992928]
Language:: English
Call no.:: M23500/389
Type:: Conference Proceedings

Details

TDL ID:	ZA00018445
Series ID:	PA00000011
Conf. info. (Name):	Symposium on modeling and simulation of thin-film processing
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.20

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