Properties of Point-Defects in Si for Process Modeling | 東京工業大学附属図書館文献データベース

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Properties of Point-Defects in Si for Process Modeling

Author(s):

Gossmann, H. J.

Rafferty, C. S.

Eaglesham, D. J.

Thompson, M. O.

Publication title:

Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

389

Pub. Year:

1995

Page(from):

3

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992924 [1558992928]

Language:

English

Call no.:

M23500/389

Type:

Conference Proceedings

Details

TDL ID:	ZA00018445
Series ID:	PA00000011
Conf. info. (Name):	Symposium on modeling and simulation of thin-film processing
Conf. info. (Number):	1995
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1995.04.17-1995.04.20

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