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Ion Implanted GaAs MESFET Characteristics for Different Dopants and Implanted Energy

Author(s):
Publication title:
Semiconductor Devices
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2733
Pub. Year:
1996
Page(from):
130
Page(to):
132
Pub. info.:
Bellingham, WA — New Delhi: SPIE-The International Society for Optical Engineering — Narosa
ISSN:
0277786X
ISBN:
9780819421142 [0819421146]
Language:
English
Call no.:
P63600/2733
Type:
Conference Proceedings

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