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Optimization of active-layer and cavity design parameters for low-threshold GaN/AIGaN double-heterostructure diode lasers

Author(s):
Publication title:
Physics and Simulation of Optoelectronic Devices IV
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2693
Pub. date:
1996
Page(from):
109
Page(to):
120
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819420671 [0819420670]
Language:
English
Call no.:
P63600/2693
Type:
Conference Proceedings

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