Characterization of Defects at the Si/SiO2 Interface of a Polysilicon-Gated MOS System by Monoenergetic Positrons

Characterization of Defects at the Si/SiO2 Interface of a Polysilicon-Gated MOS System by Monoenergetic Positrons

Author(s):

Publication title:

Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997

Title of ser.:

Materials science forum

Ser. no.:

255-257

Pub. Year:

1997

Page(from):

718

Page(to):

720

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497799 [087849779x]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00018365
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Positron Annihilation
Conf. info. (Number):	11th
Conf. info. (Venue):	Kansas City, MO, USA
Conf. info. (Date):	1997.05.25-1997.05.30

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