Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation
- Author(s):
- Publication title:
- Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 255-257
- Pub. Year:
- 1997
- Page(from):
- 472
- Page(to):
- 474
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497799 [087849779x]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
Trans Tech Publications |
8
Conference Proceedings
*PRECIPITATE AND DEFECT FORMATION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Materials Research Society |
3
Conference Proceedings
Vacancy Defects in Low-Temperature-Grown GaAs Observed by Continuous and Pulsed Slow Positrons
Trans Tech Publications |
9
Conference Proceedings
Positron annihtlation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs.(Invited)
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Study of Irradiation-Induced Vacancy Defects and Shallow Positron Traps in Silicon
Trans Tech Publications |
12
Conference Proceedings
Vacancy Type Defects in GaAs after Electron Irradiation Studied by Positron Lifetime Spectroscopy
Trans Tech Publications |