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The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs During Rapid Thermal Annealing Studied by Slow Positrons

Author(s):
Publication title:
Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary
Title of ser.:
Materials science forum
Ser. no.:
105-110
Pub. Year:
1992
Vol.:
Pt.3
Page(from):
1491
Page(to):
1494
Pub. info.:
Aederlmannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496365 [087849636x]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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