Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation

Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation

Author(s):

Publication title:

Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary

Title of ser.:

Materials science forum

Ser. no.:

105-110

Pub. Year:

1992

Vol.:

Pt.2

Page(from):

1085

Page(to):

1088

Pub. info.:

Aederlmannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496365 [087849636x]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00018358
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Positron Annihilation
Conf. info. (Number):	9th
Conf. info. (Venue):	Szombathely, Hungary
Conf. info. (Date):	1991.08.26-1991.08.31

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