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Selective dry etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP systems

Author(s):
Hays, D.C. ( University of Florida )
Abernathy, C.R.
Hobson, W.S.
Pearton, S.J.
Han, J.
Shul, R.J.
Cho, H.
Jung, K.B.
Ren, F.
Hahn, Y.B.
5 more
Publication title:
Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
573
Pub. date:
1999
Page(from):
281
Page(to):
286
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994805 [1558994807]
Language:
English
Call no.:
M23500/573
Type:
Conference Proceedings

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