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High-density plasma-induced etch damage of GaN

Author(s):
Shul, R.J. ( Sandia National Laboratories )
Zhang, L.
Baca, A.G.
Willison, C.G.
Han, J.
Pearton, S.J.
Ren, F.
Zolper, J.C.
Lester, L.F.
4 more
Publication title:
Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
573
Pub. date:
1999
Page(from):
271
Page(to):
280
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994805 [1558994807]
Language:
English
Call no.:
M23500/573
Type:
Conference Proceedings

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