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Wet and dry etching characteristics of electron beam deposited SiO and SiO2

Author(s):
LaRoche, J.R. ( University of Florida )
Ren, F.
Lothian, J.R.
Hong, J.
Pearton, S.J.
Lambers, E.
1 more
Publication title:
Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
573
Pub. Year:
1999
Page(from):
259
Page(to):
264
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994805 [1558994807]
Language:
English
Call no.:
M23500/573
Type:
Conference Proceedings

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