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Advances in GaAs MOSFET's using Ga2O3(Gd2O3) as gate oxide

Author(s):
Wang, Y.C. ( Bell Laboratories )
Hong, M.
Kuo, J.M.
Mannaerts, J.P.
Kwo, J.
Tsai, H.S.
Krajewski, J.J.
Weiner, J.S.
Chen, Y.K.
Cho, A.Y.
5 more
Publication title:
Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
573
Pub. Year:
1999
Page(from):
219
Page(to):
225
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558994805 [1558994807]
Language:
English
Call no.:
M23500/573
Type:
Conference Proceedings

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