Constant current-stress-induced breakdown of reoxidized nitrided oxide (ONO) in flash memory devices

Constant current-stress-induced breakdown of reoxidized nitrided oxide (ONO) in flash memory devices

Author(s):

Cha,C.L. ( National Univ.of Singapore )

Chor,E.F. ( National Univ.of Singapore )

Gong,H. ( National Univ.of Singapore )

Zhang,A.Q. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )

Chan,L.H. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )

Xie,J. ( Chartered Semiconductor Manufacturing Ltd. (Singapore) )

1 more

Publication title:

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3212

Pub. Year:

1997

Page(from):

368

Page(to):

375

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426444 [081942644X]

Language:

English

Call no.:

P63600/3212

Type:

Conference Proceedings

Details

TDL ID:	ZA00018328
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic Device Technology
Conf. info. (Number):	1997
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1997.10.01-1997.10.02

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