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0.18-ヲフm gate length CMOS devices with N + polycide gate for 2.5-V application

Author(s):
  • Choi,J.Y. ( Integrated Device Technology,Inc. )
  • Zhang,E. ( Integrated Device Technology,Inc. )
  • Han,C.-C. ( Integrated Device Technology,Inc. )
Publication title:
Microelectronic Device Technology : 1-2 October 1997, Austin, Texas
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3212
Pub. date:
1997
Page(from):
220
Page(to):
225
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426444 [081942644X]
Language:
English
Call no.:
P63600/3212
Type:
Conference Proceedings

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