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Shallow source/drain extension formation using antimony and indium pre-amorphization schemes for 0.18- to 0.13-ヲフm CMOS technologies

Author(s):
Publication title:
Microelectronic Device Technology : 1-2 October 1997, Austin, Texas
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3212
Pub. date:
1997
Page(from):
136
Page(to):
146
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426444 [081942644X]
Language:
English
Call no.:
P63600/3212
Type:
Conference Proceedings

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