Shallow source/drain extension formation using antimony and indium pre-amorphization schemes for 0.18- to 0.13-ｦﾌm CMOS technologies

Shallow source/drain extension formation using antimony and indium pre-amorphization schemes for 0.18- to 0.13-ｦﾌm CMOS technologies

Author(s):

Hu,J.C. ( Texas Instruments Inc. )
Rodder,M. ( Texas Instruments Inc. )
Chen,I.-C. ( Texas Instruments Inc. )

Publication title:

Microelectronic Device Technology : 1-2 October 1997, Austin, Texas

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3212

Pub. date:

1997

Page(from):

136

Page(to):

146

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426444 [081942644X]

Language:

English

Call no.:

P63600/3212

Type:

Conference Proceedings

Details

TDL ID:	ZA00018328
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic Device Technology
Conf. info. (Number):	1997
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1997.10.01-1997.10.02

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