Strained Si NMOSFET on relaxed Si1-XGeX formed by ion implantation of Ge
- Author(s):
- John,S. ( Univ.of Texas at Austin )
- Ray,S.K. ( Indian Institute of Technology )
- Oswal,S.K. ( Univ.of Texas at Austin )
- Banerjee,S.K. ( Univ.of Texas at Austin )
- Publication title:
- Microelectronic Device Technology : 1-2 October 1997, Austin, Texas
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3212
- Pub. Year:
- 1997
- Page(from):
- 129
- Page(to):
- 133
- Pub. info.:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819426444 [081942644X]
- Language:
- English
- Call no.:
- P63600/3212
- Type:
- Conference Proceedings
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