Blank Cover Image

Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05ｦﾌm

Author(s):
Choi,H.K. ( MIT Lincoln Lab. )
Turner,G.W. ( MIT Lincoln Lab. )
Walpole,J.N. ( MIT Lincoln Lab. )
Manfra,M.J. ( MIT Lincoln Lab. )
Connors,M.K. ( MIT Lincoln Lab. )
Missaggia,L.J. ( MIT Lincoln Lab. )
1 more
Publication title:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3284
Pub. Year:
1998
Page(from):
268
Page(to):
273
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427236 [0819427233]
Language:
English
Call no.:
P63600/3284
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings High-brightness tapered laser sources in the 1.3- to 2.0-ｦﾌm wavelength range

Walpole,J.N., Donnelly,J.P., Choi,H.K., Liau,Z.L., Missaggia,L.J., Bailey,R.J., Groves,S.H., Turner,G.W., Taylor,P.J., …

SPIE - The International Society for Optical Engineering
7 Conference Proceedings GaInAsSb Materials for Thermophotovoltaics

Wang, C. A., Turner, G. W., Manfra, M. J., Choi, H. K., Spears, D. L.

MRS - Materials Research Society
2 Conference Proceedings InAsSb/InAIAsSb quantum well diode lasers emitting beyond 3 ｦﾌm

Choi,H.K., Turner,G.W., Manfra,M.J., Connors,M.K., Herrmann,F.P., Baliga,A., Anderson,N.G.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2ｦﾌm (Invited Paper)

Menna,R.J., Garbuzov,D.Z., Lee,H., Martinelli,R.U., Narayan,S.Y., Connolly,J.C.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 ｦﾌm

Turner, G. W., Choi, H. K., Manfra, M. J., Connors, M. K.

MRS - Materials Research Society
9 Conference Proceedings High-power 1.3-ｦﾌm InGaAsP/InP lasers and amplifiers with tapered gain regions

Walpole,J.N., Betts,G.E., Donnelly,J.P., Groves,S.H.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings MBE GROWTH OF GaInAsSb/AlGaAsSb DOUBLE HETEROSTRUCTURES FOR DIODE LASERS EMITTING BEYOND 2 μm

Eglash, S.J., Choi, H.K., Turner, G.W., Finn, M.C.

Materials Research Society
10 Conference Proceedings Nonlinear optical properties of semiconductor quantum well structures near 1.55 ｦﾌm

Krol,M.F., Hayduk,M.J., Johns,S.T., Teegarden,K.J., Wicks,G.W.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings High-power 1.5-ｦﾌm tapered-gain-region lasers (Invited Paper)

Donnelly,J.P., Walpole,J.N., Groves,S.H., Bailey,R.J., Missaggia,L.J., Napoleone,A., Reeder,R.E., Cook,C.C.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings Gain and threshold current density characteristics of 2-ｦﾌm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset

Newell,T.C., Lester,L.F., Wu,X., Zhang,Y., Gray,A.L.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Room temperature CW operation of GaInAsSb/AlGaAsSb quantum well lasers emitting in the 2.2 to 2.3ｦﾌm wavelength range

Mermelstein, C., Simanowski, S., Mayer, M., Kiefer, R., Schmitz, J., Walther, M., Wagner, J.

MRS-Materials Research Society
12 Conference Proceedings Low-Loss, Broadened-Waveguide, High-Power 2-ｦﾌm AlGaAsSb/InGaAsSb/GaSb Separate Confinement Quantum-Well Lasers

Menna, R. J., Garbuzov, D. Z., Martinelli, R. U., Lee, H., York, P. K., Connolly, J. C., Narayan, S. Y.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12