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Gain and threshold current density characteristics of 2-ヲフm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset

Author(s):
Publication title:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3284
Pub. Year:
1998
Page(from):
258
Page(to):
267
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427236 [0819427233]
Language:
English
Call no.:
P63600/3284
Type:
Conference Proceedings

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