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InGaN/GaN double heterostructure laser with cleaved facets

Author(s):
Stocker,D. ( Boston Univ. )
Schubert,E.F. ( Boston Univ. )
Grieshaber,W. ( Boston Univ. )
Boutros,K.S. ( Advanced Technology Materials,Inc. )
Flynn,J.S. ( Advanced Technology Materials,Inc. )
Vaudo,R.P. ( Advanced Technology Materials,Inc. )
Phanse,V.M. ( Advanced Technology Materials,Inc. )
Redwing,J.M. ( Advanced Technology Materials,Inc. )
3 more
Publication title:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3284
Pub. date:
1998
Page(from):
122
Page(to):
127
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427236 [0819427233]
Language:
English
Call no.:
P63600/3284
Type:
Conference Proceedings

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