Positive bilayer resists for 248-and 193-nm lithography

Positive bilayer resists for 248-and 193-nm lithography

Author(s):

Sooriyakumaran,R. ( IBM Almaden Research Ctr. )

Wallraff,G.M. ( IBM Almaden Research Ctr. )

Larson,C.E. ( IBM Almaden Research Ctr. )

Fenzel-Alexander,D. ( IBM Almaden Research Ctr. )

DiPietro,R.A. ( IBM Almaden Research Ctr. )

Opitz,J. ( IBM Almaden Research Ctr. )

Hofer,D.C. ( IBM Almaden Research Ctr. )

LaTulipe,D.C.,Jr. ( IBM Thomas J. Watson Research Ctr. )

Simons,J.P. ( IBM Thomas J. Watson Research Ctr. )

Petrillo,K.E. ( IBM Thomas J. Watson Research Ctr. )

Babich,K. ( IBM Thomas J. Watson Research Ctr. )

Angelopoulos,M. ( IBM Thomas J. Watson Research Ctr. )

Lin,Q. ( IBM Microelectronics Div. )

Katnani,A.D. ( IBM Microelectronics Div. )

9 more

Publication title:

Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3333

Pub. Year:

1998

Vol.:

Part 1

Page(from):

219

Page(to):

227

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427786 [0819427780]

Language:

English

Call no.:

P63600/3333

Type:

Conference Proceedings

Details

TDL ID:	ZA00018317
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	1998 : 15th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.23-1998.02.25

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