Reactive ion etching of 193-nm resist candidates: current platforms and future requirements

Reactive ion etching of 193-nm resist candidates: current platforms and future requirements

Author(s):

Wallow,T.I. ( IBM Almaden Research Ctr. )

Brock,P.J. ( IBM Almaden Research Ctr. )

DiPietro,R.A. ( IBM Almaden Research Ctr. )

Allen,R.D. ( IBM Almaden Research Ctr. )

Opitz,J. ( IBM Almaden Research Ctr. )

Sooriyakumaran,R. ( IBM Almaden Research Ctr. )

Hofer,D.C. ( IBM Almaden Research Ctr. )

Meute,J. ( SEMATECH )

Byers,J.D. ( SEMATECH )

Rich,G.K. ( SEMATECH )

McCallum,M. ( SEMATECH )

Schuetze,S. ( SEMATECH )

Jayaraman,S. ( BFGoodrich )

Hullihen,K. ( BFGoodrich )

Vicari,R. ( BFGoodrich )

Rhodes,L.F. ( BFGoodrich )

Goodall,B.L. ( BFGoodrich )

Shick,R.A. ( BFGoodrich )

13 more

Publication title:

Advances in resist technology and processing XV : 23-25 February 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3333

Pub. Year:

1998

Vol.:

Part 1

Page(from):

92

Page(to):

101

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427786 [0819427780]

Language:

English

Call no.:

P63600/3333

Type:

Conference Proceedings

Details

TDL ID:	ZA00018317
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	1998 : 15th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.02.23-1998.02.25

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