Resonant Tunneling fo Holes in Strained Layers-SiGe/Si
- Author(s):
- Publication title:
- Resonant tunneling in semiconductors : physics and applications
- Title of ser.:
- NATO ASI series. Series B, Physics
- Ser. no.:
- 277
- Pub. Year:
- 1991
- Page(from):
- 85
- Page(to):
- 94
- Pages:
- 10
- Pub. info.:
- New York: Plenum Press
- ISBN:
- 9780306440489 [0306440482]
- Language:
- English
- Call no.:
- N11479/277
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
VERY THICK COHERENTLY STRAINED GexSi1-x LAYERS GROWN IN A NARROW TEMPERATURE WINDOW
Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
4
Conference Proceedings
The Stability of SiGe Strained Layers on Small Area Trench Isolated Silicon Islands
Electrochemical Society |
Materials Research Society |
5
Conference Proceedings
Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers
MRS - Materials Research Society |
MRS - Materials Research Society |
6
Conference Proceedings
Quantum Well Luminescence by Resonant Tunneling Injection of Electrons and Holes
Kluwer Academic Publishers |
SPIE-The International Society for Optical Engineering, Narosa |