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Photoluminescence in Ga0.85In0.15As0.99N0.01/GaAs single quantum wells:effect of low-temperature heat treatment in N2

Author(s):
Potter,R.J. ( Univ.of Essex )
Balkan,N.
Adams,M.J.
Chalker,P.R.
Joyce,T.B.
Bullough,T.J.
1 more
Publication title:
Physics and simulation of optoelectronic devices VIII : 24-28 January 2000, San Jose, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3944
Pub. Year:
2000
Vol.:
Part2
Page(from):
900
Page(to):
909
Pub. info.:
Bellingham, Wash.: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819435613 [0819435619]
Language:
English
Call no.:
P63600/3944
Type:
Conference Proceedings

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