Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

Effect of excited-state transitions on the threshold characteristics of a quantum dot laser

Author(s):

Asryan,L.V. ( Technische Univ.Berlin(Germany)and A.F.loffe Physical-Technical Institute )

Publication title:

Physics and simulation of optoelectronic devices VIII : 24-28 January 2000, San Jose, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3944

Pub. Year:

2000

Vol.:

Part2

Page(from):

823

Page(to):

835

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819435613 [0819435619]

Language:

English

Call no.:

P63600/3944

Type:

Conference Proceedings

Details

TDL ID:	ZA00018107
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Physics and simulation of optoelectronic devices
Conf. info. (Number):	2000 : 8th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2000.01.24-2000.01.28

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