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Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs

Author(s):
Publication title:
Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3629
Pub. Year:
1999
Page(from):
400
Page(to):
408
Pub. info.:
Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430991 [0819430994]
Language:
English
Call no.:
P63600/3629
Type:
Conference Proceedings

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