Blank Cover Image

Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD

Author(s):
Publication title:
Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3629
Pub. Year:
1999
Page(from):
371
Page(to):
380
Pub. info.:
Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430991 [0819430994]
Language:
English
Call no.:
P63600/3629
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD

Kim, S., Razeghi, M.

Electrochemical Society
7 Conference Proceedings High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization

Tsao, S., Mi, K., Szafraniec, J., Zhang, W., Lim, H., Movaghar, B., Razeghi, M.

SPIE - The International Society of Optical Engineering
2 Conference Proceedings Characteristics of InGaAs/InGaP Quantum Dot Infrared Photodetector Grown By Metal Organic Chemical Vapor Deposition

Kim, Seongsin, Razeghi, M.

Materials Research Society
8 Conference Proceedings InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications

Tsao, S., Gin, A. V., Mi, K., Szafraniec, J., Zhang, W., Lim, H., O'Sullivan, T., Jiang, J., Razeghi, M., Brown, G. J., …

SPIE - The International Society of Optical Engineering
3 Conference Proceedings The long wavelength luminescence observation from the self-organised InGaAs quantwn dots grown on(100)GaAs substrate by metalorganic chemical vapor deposition

Kim,K.S., Erdtmann,M., Razeghi,M.

Trans Tech Publications
9 Conference Proceedings Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate

Erdtmann,M., Razeghi,M.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Quantum dot intersubband photodetectors

Jelen,C.L., Erdtmann,M., Kim,S., Razeghi,M.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Mid-infrared emission in InAs/GaAs self-assembled quantum dots

Boucaud, P., Sauvage, S., Brunhes, T., Glotin, F., Prazeres, R., Ortega, J. M., Thierry-Mieg, V., Lemaitre, A., Gerard, …

MRS-Materials Research Society
5 Conference Proceedings High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition

Erdtmann,M., Matlis,A.W., Jelen,C.L., Razeghi,M., Brown,C.J.

SPIE - The International Society for Optical Engineering
11 Conference Proceedings Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array

H. Lim, S. Tsao, W. Zhang, M. Razeghi

SPIE - The International Society of Optical Engineering
6 Conference Proceedings Mid-infrared absorption in self-assembled Ge quantum dots grown on Si substrate

Wu,W.-G., Liu,J.-L., Tang,Y.-S., Jin,G.-L., Wang,K.L.

SPIE - The International Society for Optical Engineering
12 Conference Proceedings Photoconductivity in lateral conduction self-assembled Ge/Si quantum dot infrared photodetectors

Lee, S.-W., Park, C.J., Kang, T.W., Cho, H.Y., Hirakawa, K.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12