Electrical characterization of AlxGa1-xN for UV photodetector applications
- Author(s):
Saxler,A.W. ( Air Force Research Lab. ) Ahoujja,M. Mitchel,W.C. Kung,P. Walker,D. Razeghi,M. - Publication title:
- Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 3629
- Pub. Year:
- 1999
- Page(from):
- 211
- Page(to):
- 222
- Pub. info.:
- Bellingham, Wash., USA: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819430991 [0819430994]
- Language:
- English
- Call no.:
- P63600/3629
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
8
Conference Proceedings
Electrical properties of Alx Ga1-x N materials for UV photodetector applications
SPIE - The International Society for Optical Engineering |
Narosa Publishing House |
9
Conference Proceedings
AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
10
Conference Proceedings
Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Growth and characterization of very long wavelength type-? infrared detectors
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
SPIE - The International Society for Optical Engineering |